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Monolithic Above IC Resonator Technology for Integrated Novel Architecture in mobile and wireless communication

Acronym: MARTINA
Start: 7/1/2002
End: 12/31/2004
Homepage: http://www.isen.fr/martina

Project Status History
unknown 7/1/2002
 
 Funding Programmes
CORDIS Cost-sharing contracts1999547 

Abstract
The project MARTINA aims to set up a new above IC Bulk Acoustic Wave (BAW) Resonator technology in order to develop integrated systems for mobile and wireless communications standards. Film Bulk Acoustic Resonator (FBAR) based on AlN piezoelectric layer and surface micro-machining processes will allow to realize high-Q components. An above IC process compatible with BiCMOS technology will be developed and validated. Integrated FBAR resonators will play a major role in the sensitivity of the RF front-end through their implementation in filters and as resonators to achieve low phase noise voltage controlled oscillators. Two demonstrators based on two different BiCMOS technologies will be designed, fabricated and characterized: an integrated RF front-end for 2.2GHz WCDMA and 5GHz FBAR based functions for WLAN applications (HIPERLAN and 802.11a). OBJECTIVES The project MARTINA aims to set up a new above IC Bulk Acoustic Wave (BAW) Resonator technology in order to develop integrated systems for mobile and wireless communications standards. Film Bulk Acoustic Resonator (FBAR) based on AlN piezoelectric layer and surface micro-machining processes will allow to realize high-Q components. An above IC process compatible with BiCMOS technology will be developed and validated. Integrated FBAR resonators will play a major role in the sensitivity of the RF front-end through their implementation in filters and as resonators to achieve low phase noise voltage controlled oscillators. Two demonstrators based on two different BiCMOS technologies will be designed, fabricated and characterized: an integrated RF front-end for 2.2GHz WCDMA and 5GHz FBAR based functions for WLAN applications (HIPERLAN and 802.11a). DESCRIPTION OF WORK WP1: It will focus on the development of the new technology for the fabrication of Bulk Acoustic Wave resonators based on aluminium nitride piezoelectric films. The type of resonator proposed is the FBAR fabricated by surface micromachining processes. Ultimately, the technology will involve piezoelectric layers featuring different thickness in order to cover the targeted frequency bands. Modelling methodology in order to describe accurately the different resonance modes of the FBAR will be also developed. Based on this simulation tool, resonators and front-end filters for different frequency bands will be designed and optimised. WP2: It will focus on the validation of the Above IC integration of the FBAR technology by demonstrating the technological compatibilities with BiCMOS processes. The FBAR architecture is the most promising for above IC integration, as it does not involve backside alignment and substrate etching. The resonators electrodes can be directly deposited on the IC metallization plugs. Integration will be validated through the realization of the IC process and the above IC process of two demonstrators including integrated functions such as filters and VCO. Analysis of the issues related to the manufacturing of the FBAR resonator products into a production equipment will be done. WP3: Interest of the above IC FBAR technology for the future telecommunication modules will be demonstrated. Two demonstrators for WCDMA & WLAN applications will be designed and characterized. These circuits will result in a drastic reduction of die area, power consumption and cost. Potentiality of FBAR technology in term of high quality factor and low insertion loss allows to enhance the noise figure and the sensitivity of receiver using FBAR based filter. We will design FBAR based filters and low phase noise FBAR based monolithic oscillators and the low electromagnetic coupling between power amplifier and oscillator will be demonstrated.

 
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