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Rare Earth Oxide Atomic Layer Deposition for Innovation in Electronics

Acronym: REALISE
Start: 3/1/2006
End: 2/28/2009
Homepage: http://cordis.europa.eu/fetch?CALLER=FP6_PROJ&ACTION=D&DOC=2676&CAT=PROJ&QUERY=1170700784050&RCN=79809

Project Status History
unknown 3/1/2006
 
 Funding Programmes
Specific Targeted Research Project 2630000euro

Abstract
The REALISE project aims:(i) to develop an atomically controlled deposition process for high-k oxide layers as an enabling technology for a variety of innovative integrated circuit technologies and(ii) to advance fundamental knowledge of materials functionality in the areas of thin film growth, oxide-semiconductor interfaces, surface-precursor reactions and atomic-scale characterisation of dielectrics.These two global aims will be achieved by collaborative research across a range of disciplines. No satisfactory process exists for depositing rare earth oxide films as high-k dielectrics at present. The process that is the subject of this project is atomic layer deposition (ALD), the leading technology for deposition of nanometre-scale films.The project aims to overcome the current difficulties and limitations of rare earth oxide ALD, through project goals that span the entire process: design, synthesis, scale-up and testing of suitable precursors; characterisation of film quality and optimisation of deposition parameters. To investigate the functionality of rare earth oxides as dielectrics and to show the utility of ALD in the electronics industry, further goals of REALISE are: deposition onto variously-prepared semiconductor substrates (Si, Ge); high-resolution characterisation of the semiconductor-oxide interface; scale-up of new ALD process to industrially-sized Si wafers; testing of dielectric in capacitors for innovative memory (DRAM, NVM) and wireless (decoupling for RF) applications. REALISE thus brings together unique expertise to achieve urgently needed materials integration solutions for the European semiconductor industry.

 
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